| PART |
Description |
Maker |
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71T75602S133BG IDT71T75802S200BG IDT71T75802S20 |
512K x 36/ 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
512K x 36, 1M x 18 2.5V Synchronous ZBT?/a> SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
BULK COAXIAL CABLE; RE-SHAPABLE VERSION OF PE-047SR
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 4.2 ns, PQFP100
High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.2 ns, PBGA119
512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 3 ns, PQFP100
Current-Mode PWM Controller 14-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.8 ns, PQFP100
Current-Mode PWM Controller 8-PDIP -40 to 85 1M X 18 ZBT SRAM, 3.5 ns, PQFP100
Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 5 ns, PQFP100
|
IDT
Integrated Device Technology, Inc.
SRAM
|
| IDT71V65602S-100BQI IDT71V65802S-100BQI IDT71V6580 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K × 3612K采样× 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 36 ZBT SRAM, 4.2 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
3.3V 256K X 36 ZBT Synchronous 2.5V I/O PipeLined SRAM
3.3V 512K x 18 ZBT Synchronous 2.5V I/O PipeLined SRAM
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F |
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
|
Micron Technology, Inc.
|
| GS882Z18AD-150I GS882Z18AB-133 |
9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| IS61NVF51236-6.5TQL IS61NVF51236-6.5TQL-TR IS61NVF |
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
|
| MCM64Z916ZP100R MCM64Z834ZP100R |
512K X 18 ZBT SRAM, 5 ns, PBGA119
256K X 36 ZBT SRAM, 5 ns, PBGA119
|
MOTOROLA INC
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MT55L512Y36P MT55L512Y32P MT55L1MY18P |
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
| GS8162Z18BB-200IV GS8162Z18BB-150IV GS8162Z18BGB-2 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 6.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 6.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
|
